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AON4603 Complementary Enhancement Mode Field Effect Transistor
General Description
The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications). AON4603L is a Green Product ordering option. AON4603 and AON4603L are electrically identical.
Features n-channel
VDS (V) = 30V ID = 4A
p-channel
-30V -3.6A (VGS= 10V) (VGS = 10V) (VGS = 4.5V)
RDS(ON) < 75m < 100m RDS(ON) < 115m < 180m
D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
D2
G1 S1
G2 S2
DFN2X3
n-channel
p-channel Units V V A
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain TA=25C 4 Current A 3.2 ID TA=70C Pulsed Drain Current
B
Max p-channel -30 20 -3.6 -2.9 -12 2.1 1.3 -55 to 150
IDM PD TJ, TSTG
TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
12 1.9 1.2 -55 to 150
W C
Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL
Typ 54 102 58 Typ 50 85 41
Max 65 125 70 Max 60 110 50
Units C/W C/W C/W Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AON4603 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A VDS=5V, ID=4A Forward Transconductance Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4A TJ=125C 1 12 1.9 55 78 95 5.4 0.82 Min 30 1 5 100 3 75 115 1 2.5 260 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
200 40 20 2.3 6.5 3.1 1.2 1.6 3.3 2.5 13.2 1.7 9.4 3.5
3.5 8.5 4
VGS=10V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75, RGEN=3
IF=4A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s
2
12
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : March 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha and Omega Semiconductor, Ltd.
AON4603 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J
15 10 10V 8V 12 6V 4.5V 4V 6 ID(A) 5V 8 VDS=5V
9 ID (A) 6
3.5V
4 125
3
2
VGS=4.5V, ID=2A
VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 120 Normalized On-Resistance 110 100 RDS(ON) (m) 90 80 70 60 50 40 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 250 200 RDS(ON) (m) 150 125C 100 50 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage ID=4A 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 VGS=10V VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 0 1.5 2 2.5 3
25C
3.5
4
4.5
5
5.5
6
VGS(Volts) Figure 2: Transfer Characteristics
VGS=10V ID=4A
VGS=4.5V ID=2A
75
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
125
25 1.0E-03
25C
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha and Omega Semiconductor, Ltd.
AON4603 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J
10 8 VGS (Volts) 6 4 2 VDS=15V ID=4A Capacitance (pF) 300 Ciss 400
200 Coss 100 Crss
VGS=4.5V, ID=2A
0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 10s Power (W)
20
TJ(Max)=150C TA=25C
15
ID (Amps)
100s 1ms 0.1s 10ms
10
1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=65C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.
AON4603
P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, I D=-2A VDS=-5V, ID=-3.6A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-3.6A TJ=125C -1 -12 -2 81 115 136 4.8 -0.82 Min -30 -1 -5 100 -3 100 180 -1 -2.5 340 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10) Total Gate Charge(10V) Qg(4.5) Total Gate Charge(4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
260 55 44 4.3 5.8 3 0.78 1.6 7 6 15 7.5 12.5 5.5
6.5 7 4
VGS=-10V, VDS=-15V, ID=-3.6A
VGS=-10V, VDS=-15V, RL=4.2, RGEN=3 IF=-3.6A, dI/dt=100A/s IF=-3.6A, dI/dt=100A/s
15
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : March 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AON4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
20 -10V -9V 15 -ID (A) -8V -6V -7V 8 25C -ID(A) -5V 10 6 125C 4 2 0 0 1 2 3 4 5 1 2 3 4 5 6 -VDS (Volts) Fig 1: On-Region Characteristics 200 Normalized On-Resistance 1.6 VGS=-10V ID=-3.6A -VGS(Volts) Figure 2: Transfer Characteristics 10 VDS=-5V
VGS=-10V, VDS=-5V
5 -4V -3.5V
VGS=-4.5V
-12
VGS=-4.5V, I D=-2A
-3V 0
340
6.5
RDS(ON) (m)
150
VGS=-4.5V
1.4
1.2 VGS=-4.5V ID=-2A
100
VGS=-10V
1
50 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 250 ID=-3.6A RDS(ON) (m) 200 150 100 25C 50 0 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) 125C
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 1.0E-02 125C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C
Alpha & Omega Semiconductor, Ltd.
AON4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 500 VDS=-15V ID=-3.6A Capacitance (pF) 400 Ciss 300 200 Coss 100
VGS=-10V, VDS=-5V
-12
VGS=-4.5V, I D=-2A
0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0
Crss 5 10 15 20 25 30
-VDS (Volts) Figure 8: Capacitance Characteristics
340
100.0 TJ(Max)=150C TA=25C Power (W) -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 1ms 10s 100s
20
TJ(Max)=150C 6.5 TA=25C
15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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